strong ir fet? IRFH7084pbf hexfet ? power mosfet application ? half - bridge and full - bridge topologies ? synchronous rectifier applications ? resonant mode power supplies ? dc/dc converters ? dc/ac inverters benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/dt and di/dt capability ? lead - free, rohs compliant v dss 40v r ds(on) typ. 0.95m ? max 1.25m ? i d (silicon limited) 265a ? i d (package limited) 100a ? fig 1. typical on - resistance vs. gate voltage fig 2. maximum drain current vs. case temperature pqfn 5x6 mm base part number package type standard pack orderable part number form quantity IRFH7084pbf pqfn 5mm x 6mm tape and reel 4000 IRFH7084trpbf 25 50 75 100 125 150 t c , case temperature (c) 0 60 120 180 240 300 i d , drain current (a) limited by package 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 1 2 3 4 5 6 r ds (on), drain-to -source on resistance ( m ? ) t j = 25c t j = 125c i d = 100a 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 downloaded from: http:///
IRFH7084pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 absolute maximium rating symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 40 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 265 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 170 ? i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 100 ? i dm pulsed drain current ? 400 a linear derating factor 1.25 w/c p d @t c = 25c max power dissipation ? 156 v gs gate - to - source voltage 20 v t j t stg operating junction and storage temperature range - 55 to + 150 c avalanche characteristics e as (thermally limited) single pulse avalanche energy ? 185 mj e as (tested) single pulse avalanche energy tested value ? 370 i ar avalanche current ? see fig 14, 15, 23a, a e ar repetitive avalanche energy ? mj thermal resistance parameter typ. max. units r ? jc (bottom) junction - to - case ? 0.5 0.8 c/w r ? jc (top) junction - to - case ? CCC 21 r ? ja junction - to - ambient ? CCC 35 r ? ja (<10s) junction - to - ambient ? CCC 20 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain - to - source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.034 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain - to - source on - resistance CCC 0.95 1.25 m ? v gs = 10v, i d = 100a v gs(th) gate threshold voltage 2.2 CCC 3.9 v v ds = v gs , i d = 150a i dss drain - to - source leakage current CCC CCC 1.0 a v ds =40 v, v gs = 0v CCC CCC 150 v ds =40v,v gs = 0v,t j =125c i gss gate - to - source forward leakage CCC CCC 100 na v gs = 20v gate - to - source reverse leakage CCC CCC - 100 v gs = - 20v r g gate resistance CCC 1.4 CCC ? notes: ? calculated continuous current based on maximum allowable junction temperature. package is li mited to 100a by production test capability. ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.037mh, r g = 50 ? , i as = 100a, v gs =10v. ? i sd ? 100a, di/dt ? 994a/s, v dd ? v (br)dss , t j ? 150c. ? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j =25c, l=0.037mh, r g = 50 ? , i as =100a, v gs =10v. ? when mounted on 1 inch square pcb (fr - 4). please refer to an - 994 for more details: http://www.irf.com/technical - info/appnotes/an - 994.pdf downloaded from: http:///
IRFH7084pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 120 CCC CCC s v ds = 10v, i d =100a q g total gate charge CCC 127 190 i d = 100a nc q gs gate - to - source charge CCC 35 CCC v ds = 20v q gd gate - to - drain charge CCC 41 CCC v gs = 10v q sync total gate charge sync. (qgC qgd) CCC 195 CCC t d(on) turn - on delay time CCC 16 CCC ns v dd = 20v t r rise time CCC 31 CCC i d = 30a t d(off) turn - off delay time CCC 64 CCC r g = 2.7 ? t f fall time CCC 34 CCC v gs = 10v ? c iss input capacitance CCC 6560 CCC pf v gs = 0v c oss output capacitance CCC 940 CCC v ds = 25v c rss reverse transfer capacitance CCC 650 CCC ? = 1.0mhz, see fig.5 c oss eff.(er) effective output capacitance (energy related) CCC 1120 CCC v gs = 0v, vds = 0v to 32v ? see fig.11 c oss eff.(tr) output capacitance (time related) CCC 1300 CCC v gs = 0v, vds = 0v to 32v ? diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 100 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current CCC CCC 400 integral reverse (body diode) ? p - n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c,i s = 100a,v gs = 0v ? dv/dt peak diode recovery dv/dt ? CCC 4.5 CCC v/ns t j = 150c,i s =100a,v ds = 40v ? t rr reverse recovery time CCC 36 CCC ns t j = 25c v dd = 34v CCC 37 CCC t j = 125c i f = 100a, q rr reverse recovery charge CCC 38 CCC nc t j = 25c di/dt = 100a/s ? CCC 40 CCC t j = 125c i rrm reverse recovery current CCC 1.7 CCC a t j = 25c d s g downloaded from: http:///
IRFH7084pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 fig 6. normalized on - resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain - to - source voltage fig 8. typical gate charge vs. gate - to - source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , drain-to-source current (a) ? 60s pulse width tj = 25c 4.0v vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , drain-to-source current (a) ? 60s pulse width tj = 150c 4.0v vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , drain-to-source current (a) v ds = 10v ? 60s pulse width t j = 25c t j = 150c 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c, capacitance (pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds short ed c rss = c gd c oss = c ds + c gd 0 40 80 120 160 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 32v v ds = 20v i d = 100a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r ds(on) , drain-to-source on resistance (normalized) i d = 100a v gs = 10v downloaded from: http:///
IRFH7084pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 fig 10. maximum safe operating area fig 11. drain - to Csource breakdown voltage fig 12. typical c oss stored energy fig 13. typical on - resistance vs. drain current fig 9. typical source - drain diode forward voltage 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 10000 i sd , reverse drain current (a) t j = 25c t j = 150c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 40 41 42 43 44 45 46 47 48 49 v (br)dss , drain-to-source breakdown voltage (v) id = 1.0ma 0 10 20 30 40 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 energy (j) 0 40 80 120 160 200 i d , drain current (a) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r ds (on), drain-to -source on resistance ( m ? ) vgs = 6.0v vgs = 7.0v vgs = 10v vgs = 15v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) downloaded from: http:///
IRFH7084pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 fig 14. maximum effective transient thermal impedance, junction - to - case fig 16. maximum avalanche energy vs. temperature fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an - 1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long a st jmax is not exceeded. 3. equation below based on circuit and waveforms sho wn in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pu lse. 5. bv = rated breakdown voltage (1.3 factor account s for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to e xceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 thermal response ( z thjc ) c/w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 avalanche current (a) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e ar , avalanche energy (mj) top single pulse bottom 1.0% duty cycle i d = 100a downloaded from: http:///
IRFH7084pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs (th) gate threshold voltage (v) i d = 150a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt ( a/s) 0 2 4 6 8 10 12 i rrm (a) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 240 q rr (nc) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i rrm (a) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 240 q rr (nc) i f = 100a v r = 34v t j = 25c t j = 125c downloaded from: http:///
IRFH7084pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 fig 22. peak diode recovery dv/dt test circuit for n - channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i a s 0 .0 1 ? t p d .u .t l v d s + - v d d d r iv e r a 1 5 v 2 0 v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (b r ) d s s i a s fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms v ds v gs id v gs(th) q gs1 q gs2 q gd q godr fig 25b. gate charge waveform downloaded from: http:///
IRFH7084pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an - 1136: http://www.irf.com/technical - info/appnotes/an - 1136.pdf for more information on package inspection techniques, please refer to application note an - 1154: http://www.irf.com/technical - info/appnotes/an - 1154.pdf downloaded from: http:///
IRFH7084pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback october 16, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto - call/ cl pqfn 5x6 outline "b" tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines ) moisture sensitivity level pqfn 5mmx 6mm msl1 (per jedec j - std - 020d ??? ) rohs compliant yes ? qualification standards can be found at international rectifiers web site http://www.irf.com/product - info/reliability ?? higher qualification ratings may be available should the user have such requirements. please cont act your international rectifier sales representative for further information: http://www.irf.com/whoto - call/salesrep/ ??? applicable version of jedec standard at the time of product release. revision history date comments 10/16/14 ? add pd at tc=25c on page 1 downloaded from: http:///
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